Lam2300多晶矽與介電質乾蝕刻機 標準製程.

Presentation on theme: "Lam2300多晶矽與介電質乾蝕刻機 標準製程."— Presentation transcript:

1 Lam2300多晶矽與介電質乾蝕刻機 標準製程

2 多晶矽製程腔體系統:Poly gate Film Stack etch
Poly CD map 91.3 nm ER summary

3 多晶矽製程腔體系統:Poly film Base Line E/R Test Result
Poly ME Poly OE Poly Oxide PR

4 介電質製程腔體系統:Exelan OX Contact Film Stack
LET :10°C, UET:140°C, 200mm Recipe BARC : 70mT/ 400W(27)/ 190CF4/ 10O2/ 6O2/ 50%CW / He 20T/20T / 40” ME:50mT/ 1600(27)/ 1175(2)/ 300Ar/ 28C4F8/ 10O2/ 50%CW/ He 20T/20T/ 90” PR 250nm SiN200 nm PSG 870nm BARC 96nm ADI:135nm

5 The numbers are E/R: Å/60s
介電質製程腔體系統:Exelan OX Contact Base Line E/R Test Result LET :10°C, UET:140°C, 200mm Recipe ME:50mT/ 1600(27)/ 1175(2)/ 300Ar/ 28C4F8/ 10O2/ 50%CW/ He 20T/20T/ 60” OX SiN The numbers are E/R: Å/60s

6 介電質製程腔體系統:Summary Exelan OX Contact
Item 2300 Performance 1. Oxide Etch Rate : 5646.3Å/min 2. Uniformity : 2.40% 3. Selectivity: 11.18 4. SiN loss 40A 5. Contact Aspect Ratio : 7.14 6. Profile : 88.54° 7. CD loss : –9.4% 8. CD Uniformity : 7.3nm

7 光阻去除灰化製程腔體系統:P.R strip Base Line E/R Test Result
Strip recipe :750mT/1500W/100N2/1000O2 PR7000A/ Si-sub Item Spec Result PR ER ≧ 5000Å/min 　26706 Å/min Non-uniformity ≦ ±8% (WIW) 4.80% ≦ ±8% (WTW) 2% Seletivity PR (I-line)/SiN ≧50:1 ∞　 PR (I-line)/TiN ≧50:1 66765 PR (I-line)/TEOS ≧50:1 PR OX SiN TiN