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報告者:謝尚衛 專題指導老師:郭艷光 博士 日期:2003/3/21
國立彰化師範大學藍光雷射實驗室 Introduction of passive Q-switching theory and tunable Cr:YSO Q-switched Cr:LiSAF laser 報告者:謝尚衛 專題指導老師:郭艷光 博士 日期:2003/3/21
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What is the meaning of laser?
LASER is the abbreviation(縮寫) of Light Amplification(放大) by Stimulated(受激) Emission of Radiation Taiwan 雷射 (取其音) China 激光 (取其意) 國立彰化師範大學物理學系 謝尚衛
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The kinds of laser system
Gas Lasers He-Ne Laser, Ar+ Laser, CO2 Laser, N2 Laser, … Liquid Lasers Organic(有機的) Dye(染料) Lasers, … Solid-State Lasers Ruby Laser, Nd:YAG Laser, Nd:Glass Laser, LiSAF Laser, … Semiconductor Lasers AlGaAs, AlGaInP, InGaN, InGaAsP, VCSEL, … Other Lasers Chemical Laser, Free-Electron Laser, Excimer(準分子) Laser, … 國立彰化師範大學物理學系 謝尚衛
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雷射系統的三大基本要素 Pumping System Laser Output Active Medium(介質) Mirror
(Total Reflector) (Output Coupler) Laser Output Active Medium(介質) 國立彰化師範大學物理學系 謝尚衛
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四階雷射與三階雷射 Level 2 Fast Level 3 Pumping Emit Light Level 4 Fast Level 1
(Upper Laser Level) Level 4 (Lower Laser Level) Pumping Emit Light Fast Level 1 (Ground State) The dynamics(動力學) of most lasers, including the semiconductor lasers, can be described by the four energy levels shown above. These lasers are called "4-level lasers" that usually have good laser efficiency. For some lasers (e.g., ruby) the lower laser level is in fact the ground state. These lasers are called "3-level lasers" that usually have relatively poor laser efficiency. 國立彰化師範大學物理學系 謝尚衛
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The definition of Q(quality)
In an optical resonator(共鳴體系) the quality factor Q is defined as the ratio of the energy stored(貯存) in the laser cavity to the energy loss per cycle(週期). Therefore, the quality factor of a laser resonator can be altered(改變) by varying(變化) the cavity loss. 國立彰化師範大學物理學系 謝尚衛
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主動Q開關的架構示意圖 Pumping System EO or AO Q Switch Laser Output
Mirror (Total Reflector) (Output Coupler) Active Medium EO or AO Q Switch Laser Output 國立彰化師範大學物理學系 謝尚衛
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被動Q開關的架構示意圖 Pumping System Saturable Absorber Laser Output
Mirror (Total Reflector) (Output Coupler) Active Medium Saturable Absorber Laser Output 國立彰化師範大學物理學系 謝尚衛
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連續耦合方程式與參數說明 γ為居量轉換因子,n為雷射共振腔內的光子數,Ng為居量反轉數;Na為可飽和吸收體基態的電子數;Na0為Na的初始值;gg = 1/tg為雷射上能階的衰減速率,其中tg為雷射晶體的放射生命期;ga = 1/ta為可飽和吸收體的鬆弛速率,ta則為可飽和吸收體的放射生命期;Rp為激發速率, gc為雷射光在雷射腔內的衰減速率,Kg及Ka為耦合係數,其中Kg = 2sg/trAg;Ka = 2sa/trAa,sg為雷射晶棒的放射截面積;sa為可飽和吸收體基態的吸收截面積,tr為光子在雷射腔內的週期,Ag與Aa分別為雷射光束於雷射晶棒與可飽和吸收體上的截面積;β為可飽和吸收體激態吸收截面積與基態吸收截面積的比值。 國立彰化師範大學物理學系 謝尚衛
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簡介Cr:LiSAF雷射 繼 1988年發明Cr:LiCAF雷射之後(可調範圍725~840 nm;尖峰波長780 nm), Steven Payne在1989發明Cr:LiSAF可調固態雷射。 Cr:LiSAF雷射可調範圍相當的長(780~920 nm) ,其尖峰波長為830 nm 。 Cr:LiSAF雷射上能階的生命期約為67 ms,遠比Ti:sapphire雷射(3.2 ms)長得多,除了具有可以使用閃光燈激發的優點之外,在Q-Switching的應用方面也較具優勢。 國立彰化師範大學物理學系 謝尚衛
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Cr:YSO固態可飽和吸收體 1992年Deka等人首次對固態可飽和吸收體Cr:YSO做出光譜分析。
有不少論文指出,Cr:YSO可適用於紅寶石、Cr:LiSAF、亞歷山大等固態雷射當作可飽和吸收體。所以,可調範圍偏長波長的Cr:LiSAF固態雷射使用Cr:YSO是可以產生高功率的雷射脈衝輸出的。 國立彰化師範大學物理學系 謝尚衛
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Cr:LiSAF(English edition)
In 1989, Steven A. Payne et al. discovered Cr3+:LiSrAlF6 (Cr:LiSAF), which has a tuning range from 780 nm to 920 nm (peaked near 830 nm) and an excited lifetime of 67 ms. This material is very similar to Cr3+:LiCaAlF6 (Cr:LiCAF) which has a tuning range from 725 nm to 840 nm and a lifetime of 170 ms. Since the peak emission of LiSAF (4.8×10-20 cm2) is four times larger than LiCAF, it generally performs better, and most of the recent laser work has concentrated(集中) on LiSAF. Peak emission of LiSAF is at a slightly longer wavelength as compared to Ti:sapphire, but there is a good overlap between the spectra. The major differences between the two crystals are the emission cross-section, fluorescent(螢光性的) lifetime and the thermal and mechanical properties. Although the gain of Cr:LiSAF is approximately one order of magnitude lower than that of Ti:sapphire, it has a long enough lifetime of 67 ms to permit efficient flashlamp pumping. Cr:LiSAF is a rather soft and mechanically weak crystal with properties more related to glass than the far superior Ti:sapphire crystal. 國立彰化師範大學物理學系 謝尚衛
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Cr:YSO吸收截面積a以及Cr:LiSAF放射 截面積g在780 ~ 920 nm之變化圖
Absorption Cross-Section of Cr:YSO (10-19 cm2 ) Emission Cross-Section of Cr:LiSAF (10-20 cm2 ) Wavelength (nm) 根據被動Q開關理論,要得到效率好的系統,(a/g)必須要大於粒 子反轉係數(四階雷射為1) 。從圖中我們可以知道,在780 ~ 920 nm 的波長範圍中,其(a/g)值均大於1 。 國立彰化師範大學物理學系 謝尚衛
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不同可調範圍的波長在變化可飽和吸收體的基態電子數Na0下所得到的輸出能量圖
從圖中我們可以知道,可飽和吸收體的基態電子數會影響雷射光的輸出能量值。除此之外,在固定可飽和吸收體的基態電子數時,當可調波長由880 nm 縮短至830 nm,輸出能量有逐漸增加的趨勢。 國立彰化師範大學物理學系 謝尚衛
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歇後小語一則 某日在報上看到吸煙對身體不好 於是我不再吸煙 後來又在報上看到喝酒對身體也不好 於是我不再喝酒
又隔數日在報上又看到偷看女生對身體也不好 於是我 ˙ ˙ ˙ ˙ ˙ ˙ ˙ ˙ ˙ ˙ ˙ 不再看報紙 ^^ 國立彰化師範大學物理學系 謝尚衛
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感謝各位的聆聽與指教 !! 國立彰化師範大學物理學系 謝尚衛
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