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Dr. Rational You IEK/ITRI 2002/04/25

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1 Dr. Rational You IEK/ITRI 2002/04/25
奈米碳管在奈米電腦的應用 Dr. Rational You IEK/ITRI 2002/04/25 Source: (2002/02)

2 SET (單電子電晶體)﹕1.3°K (a) CNT-SET 在1.3°K 時量測到庫倫阻斷效應﹔ (b)元件結構圖
Source: (2002/02)

3 (a)以AFM在CNT 做出相距約20 nm 的連續彎曲的製作過程﹔
SET (單電子電晶體)﹕260°K (a)以AFM在CNT 做出相距約20 nm 的連續彎曲的製作過程﹔ (b)在260°K 時量到的CB 效應 Source: (2002/02)

4 CNT FET 元件 (a)上視圖﹔ (b)剖面圖﹔ (c)量測到在不同VSD 偏壓下ISD 對VG 變化
Source: (2002/02)

5 N 型CNT FET 的I-V特性圖﹕ (a)真空退火﹔ (b)鉀元素摻雜
Source: (2002/02)

6 CNT FET 反相器元件 (a)由N 與P 型CNT 所組合成的CNT FET 反相器元件結構圖﹔
(b) Vin-Vout 特性圖 (元件的電壓增益大於1) Source: (2002/02)

7 具有分離式閘極的CNT FET 元件﹕ (a) 上視圖﹔ (b) 側視示意圖﹔
(c)利用Au 作為導線來連接多個CNT FET 的源極、汲極、閘極組合成各式的CNT 邏輯元件 Source: (2002/02)

8 以1~3 個CNT FET 組合成的邏輯元件 (a)Inverter (voltage gain=3~5)﹔ (b)NOR gate ﹔
(c)SRAM﹔ (d)Ring oscillator (frequency=5 Hz) Source: (2002/02)

9 Separation Technology for CNT
在MWNT / SWNT 兩端加上固定電壓﹐使金屬性的一層(MWNT) /一根 (SWNT)碳管燒毀﹐最後只有半導體性的留下。 在MWNT 兩端加固定電壓後﹐當MWNT 每層外殼燒毀時電流劇降的特性圖。 Source: (2002/02)

10 Electric-Field-Assisted Assembly for CNT
Source: (2002/02)

11 Chemically Functionalized Template for CNT
Source: (2002/02)

12 Fluidic Alignment for CNT
Source: (2002/02)

13 Electric-Field Directed Growth for CNT
Source: (2002/02)

14 Reference-1 1. S. Iijima, Nature 354, 56 (1991).
2. P. Collins & P.Avouris, Scientific American, 62 (2000). 3. S. Iijima & T. Ichihashi, Nature 363, 605 (1993). 4. D. S. Bethune, et al., Nature (1993). 5. R. E. Smalley, et al., Nature 391, 59 (1998). 6. C. M. Lieber, Nature 391, 62 (1998). 7. M. S. Dresselhaus, G. Dresselhaus and P. Avouris, Carbon Nanotubes (Springer, 2001). 8. R. E. Smalley, et al., Science 273, 483 (1996). 9. S. J. Tan, et al, Nature 386, 474(1997). 10. M. Bockrath, et al., Science 275, 1922 (1997). 11. A.Rochefort, et al., Phys. Rev. B 60, (1999). 12. D. Bozovic, et al., Appl. Phys. Lett. 78, 3693 (2001). 13. C. Dekker, et al, Science 293, 76 (2001). 14. S. J. Tan, et al, Nature 393, 49(1998). Source: (2002/02)

15 Reference-2 15. R. Martel, et al., Appl. Phys. Lett. 73, 2447 (1999).
16. V. Derkycke, et al., Nano Lett. 1, 453 (2001). 17. X. Liy, et al., Appl. Phys. Lett. 79, 3329 (2001). 18. C. Dekker, et al., Science 294, 1317 (2001). 19. P. G. Collins, et al., Science 292, 706 (2001). 20. P. G. Collins, et al, Phys. Rev. Lett. 86, 3128 (2001). 21. M. Radosavlievic, et al., Phys. Rev. B 64, (2001). 22. K. Yamamoto, et al., J. Phys. D 31, L34 (1998). 23. P. A. Smith, et al., Appl. Phys. Lett. 77, 1399 (2000). 24. X. Duan, et al., Nature 409, 66 (2001). 25. R. E. Smalley, et al., Chem. Phys. Lett. 303, 125 (1998). 26. Y. Huang, et al., Science 291, 630 (2001). 27. Y. Huang, et al., Science 294, 1313 (2001) 28. H. Dai, et al., Appl. Phys. Lett. 79, 3155 (2001). Source: (2002/02)


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