版權所有 翻印必究 指導教授：林克默 博士 報告學生：許博淳 報告日期： 2011/10/24

版權所有 翻印必究 Results and discussion The crystalline peak at 33° corresponds to the diffraction of the (200) plane of the Si substrate. Except for the peak from the Si substrate, there is no prominent peak, which means that the IGZO thin films have an amorphous phase, even at a relatively high annealing temperature of 600 °C. Fig. 1. XRD patterns optained from IGZO thin film annealed from 300 to 600 ℃ in air for 3hr. The peaks at around 33 ° are from the Si substrate. 2016/11/232 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 Results and discussion Fig. 2. (a and c) High resolution TEM images of IGZO thin films annealed at 300 and 600 °C, respectively. (b and d) Diffraction patterns of IGZO thin films annealed at 300 and 600 °C, respectively. The marked region in (c) indicates a nanocrystal with a size of 5 nm and the inset is a fast Fourier transform (FFT) image of the region with a crystalline phase. 2016/11/233 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 As shown in the HRTEM results, the IGZO thin films have a thickness of about 20 nm and an amorphous-like phase. In the case of the sample annealed at 600 °C, it is observed that a very small amount of crystallization occurs with tiny nanoparticles being formed. The region designated in Fig. 2(c) shows a nanoparticle with a size of about 5 nm and the fast Fourier transform (FFT) of this region [inset of Fig. 2(c)] confirms that it has a crystalline phase. However, the low density and small size of these crystals result in their producing no diffraction peaks in the XRD measurements and diffraction pattern. Results and discussion 2016/11/234 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 Fig. 3. Optical transmittance spectra of the spin coated IGZO thin films on corning 1737 glass substrates. Fig. 3 shows the optical transmittance spectra of the IGZO thin films annealed at 300 and 600 °C in a wavelength range of 300–800 nm. These films were spin- coated on a Corning 1737 glass substrate and show a high transparency of over 80% in the visible range at annealing temperatures of up to 600 °C. Results and discussion 2016/11/235 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 Fig. 4. Output characteristics of solution processed IGZO TFTs annealed at (a) 300, (b) 400, (c) 500, and (d) 600 °C. Gate voltage is increased from 0 V to 30 V in a 10 V step. Results and discussion 2016/11/236 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 The drain current versus drain to source voltage (ID–VD) output characteristics of the IGZO TFTs depending on the annealing temperature, where the gate voltage is varied from 0 to 30 V. The samples annealed at both 300 and 600 °C exhibit n-type transistor behavior. Results and discussion 2016/11/237 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 Results and discussion Fig. 5. Transfer characteristics for a-IGZO TFTs annealed at different temperatures. The transfer curves are obtained fromthe drain voltage, showing a saturated drain current in the output curves. The threshold voltage (V TH ) can be derived by extrapolating the square root of the drain current versus gate voltage ( ) curve in the saturation region. The TFTs operate in enhancement modewhen the annealing temperature is 400 °C or less. On the other hand, the TFTs annealed at temperatures over 400 °C show depletion mode behavior. 2016/11/238 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 使用 sol-gel 製程並進行熱退火的 IGZO 薄膜層，能成功製造氧 化物薄膜電晶體。 退火溫度 600 ℃時 IGZO 薄膜為非晶相，但還是會觀察到少量 的結晶。 熱退火後的 IGZO 薄膜在可見光範圍內的穿透率達 80 ％以上。 隨著退火溫度的升高，使載流子濃度變得更高；由於熱退火 造成的氧空缺，有助於改變 TFT 的特性。 Conclusion 2016/11/239 STUT 太陽能材料與模組實驗室

版權所有 翻印必究 Thank you for your attention