Infineon cool MOSFET介绍

History of CoolMOS™ Product from S5 to C6/E6 & CFD2 S5 series: the first series of CoolMOS™, market entry in 1998 slow switching, close to conventional MOSFET, Vth 4.5 V, Gfs low, Rg high design-in in high power SMPS only C3 series: the third series of CoolMOS™, market entry in 2001 the „working horse“ of the portfolio, fast switching, symmetrical rise/fall time @10 V Vgs, Vth 3 V, Rg very low design-in into all CoolMOS™ segments CFD series: the fourth series of CoolMOS™, market entry in 2004, fast body diode, Qrr 1/10th of C3 series, Vth 4 V, Rg low specific for phase-shift ZVS and DC/AC power applications CP series: the fifth series of CoolMOS™, market entry in 2005, ultra low Rdson, ultra low gate charge, very fast switching Vth 3 V, internal Rg very low C6/E6 series: launched in 2009 and 2010 respectively as the sixth CoolMOS™ technology is planned to be the successor of C3 CFD2 series: the first 650 V superjunction technology with integrated fast body diode on the market and Significant Qg reduction compared to previous CFD technology 29.12.2018 2018/12/292018/12/292018/12/29

The choice of cool MOS in Soft-switching/Hard-switching application RdsON [ mΩ] Resonant topologies 3000 mΩ CP technology is recommended for hard switching. CFD2 technology is soft switching. CFD2A series is automotive qualified parts. C6/E6 technology is usable for hard and soft switching Lighting, Adapter C6 CP Hard switching topologies C3 660 mΩ CFD CFD2 Resonant topologies PC Power, Adapter, LCD/PDP C6 CFD2A CP C3 Hard switching topologies 199 mΩ CFD CFD2 Resonant topologies Server, Telecom, Solar, UPS C6 CFD2A CP Hard switching topologies C3 year <2009 2011

Infineon cool MOSFET技术发展介绍 备注：Infineon cool MOSFET产品另两款产品E6（与C6同一技术，但Rg较小）和CFD2（对比CFD主要改善了Qg）！

第一代为S5/C2，采用7层外延，比电阻为33mcm 第三代为CS/CP，采用7层外延，cell pitch减小，比电阻为25mcm

第三代为CS/CP，采用7层外延，比电阻降为25mcm（cell pitch由15um降为11.5um） 固定BV和Q，随着cell pitch减小，电阻减小

CFD技术 CFD相对C3，导通电阻略有增加，动态性能由于采用寿命控制技术而更优！

C6系列技术 Eoss和Qrr减小，推测采用的寿命控制技术 技术上吸收CP系列通过调整外延减小Cell pitch改善比电阻（比电阻降为25mcm ）； Qg比C3系列略有下降，仍大于CP系列，推测C6沿用C3系列的六角版图布局；

MOSFET Rg影响动态性能

C6系列技术 C6系列采用了内置电阻，而且随着电阻的减小，内置电阻减小

650V CoolMOS™ CFD2 Features & Benefits First 650V HV MOS technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation - self limiting di/dt and dv/dt Significant Qg reduction compared to previous CFD technology Tighter Rdson max to Rdson typ window Low switching losses due to low Qrr at repetitive commutation on body diode Low Qoss Reduced turn on and turn off delay times Easy to design in

Main Differences Between CFD and CFD2 CFD2 is a 650V class MOSFET (CFD is 600V) Better light load efficiency due to reduced gate charge Softer commutation behavior and therefore better EMI behavior CFD2 offers customers a new cost down roadmap CFD: fast switching of voltage or current i.e. di/dt or dv/dt (main causes of EMI) CFD2: softer commutation reduces this problem saving customer time and money in designing in the part Set date Page 14

Reduction of Qg 650V CFD2 The 650V CFD2 has about 30% lower Qg in all RDS(on) classes compared to 600V CFD.

Infineon技术发展路线 1998年第一代为S5/C2，采用7层外延，比电阻为33mcm 2001年第二代为C3，采用6层外延，比电阻为33mcm 2004年第三代为CFD，导通比电阻与C3系列相当，但采用寿命控制技术提高器件的动态性能； 2005年第四代为CS/CP，采用7层外延，cell pitch减小，比电阻降为为25mcm；同时版图拓扑采用减小Cgd的设计 2009年推出C6/E6系列： Qg比C3系列略有下降，仍大于CP系列，推测C6沿 用C3系列的六角版图布局； 技术上吸收CP系列通过调整外延减小Cell pitch改 善比电阻（比电阻降为25mcm ）； Eoss和Qrr减小，推测吸收采用CFD系列的寿命控 制技术； C6/E6系列采用了内置栅极电阻，Rg随着Rdson减 小而减小，稳定动态特性； E6与C6属于同一水平，但E6产品系列Rdson范围 更小（190~750），同Rdson，E6的Rg更小； 2010年推出CFD2系列： 技术上吸收CP系列通过调整外延减小Cell pitch改善比电阻（比电阻降为25mcm ）； 沿用CFD系列的寿命控制技术； 相对CFD系列，Qg水平显著减小，推测版图布 局借鉴了CP系列的设计；

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