半導體原理及應用 (II) 陳志方 國立成功大學 電機工程學系 1/15/06.

Presentation on theme: "半導體原理及應用 (II) 陳志方 國立成功大學 電機工程學系 1/15/06."— Presentation transcript:

1 半導體原理及應用 (II) 陳志方 國立成功大學 電機工程學系 1/15/06

2 Outline ULSI 簡介與應用 ULSI 製程簡介 ULSI 之未來趨勢 ULSI 製程影片觀賞

3 ULSI 簡介與應用 Semiconductor Semiconductor devices Integrated circuits
MOSFET CMOS Integrated circuits Applications of IC

4 Semiconductor Conductor, insulator
Semiconductor:  = 10–2 ~ 109 ohm-cm at room T element: Si, Ge… (IV) compound: GaAs… (III-V), ZnS… (II-VI), SiC… (IV-IV) Semiconductor devices:

5 Market Share in Semiconductor Devices
Si-based (especially MOSFET) devices are dominant

6 MOSFET M: Metal (or n+-poly, p+-poly) O: Oxide (gate oxide)
S: Semiconductor (p-Si or n-Si) FET: Field effect transistor (Ey, Ex)

7 CMOS Complementary MOS = NMOS & PMOS pair (CMOS = NMOS + PMOS)

8 IC Integrated Circuits: composed of many devices on a chip (die)
SSI: small scale IC MSI: medium scale IC LSI: large scale IC VLSI: very large scale IC ULSI: ultra large scale IC

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10 Application of ULSI

11 ULSI 製程簡介 IC fabrication flow CMOS process flow Crystal growth
Cleaning Thin film deposition Oxidation Diffusion Ion implantation Etching Lithography Metallization Planarization CMOS process flow

12 IC Fabrication Flow 電路設計  IC製造  封裝  測試

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14 Crystal Growth

15 Wafer Size size => number of chips , cost 

16 單晶體 vs. 多晶體

17 多晶矽原料 SiO2 + 2C  Si + 2CO (純度98%) Si + 3HCl  SiHCl3 + H2 (蒸餾去除不純物)
SiHCl3 + H2  Si + 3HCl (純度 %) “11個9”

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19 長晶爐 (上升: 0.3~10mm/min 旋轉: 2~20rpm) (避免Si在 高溫氧化) SiO2  SiO + O (脫氧)
(熱場) (液態表面溫度) (控制: 晶棒直徑 上升速率 液面溫度) (固定液面高度)

20 晶圓成形

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36 RTP Rapid thermal processing

37 Diffusion

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41 Ion Implantation

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47 Etching

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88 ULSI 之未來趨勢 Moore’s law Advanced MOSFET Physics Material Technology

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90 Challenges in IC Moore’s law: number of transistors 2X/18~24 months => density , performance , functionality  (SOC)

91 Technology Roadmap Device dimension  <= physics + material + technology

92 Recent Trend of MOSFET Trend of advanced MOSFET High-k (C = A/d)
Low-k Cu (R = l/A) Metal gate Strain (m = q/m*) 浸潤式微影技術 …