3 4.1 基本製程步驟 包含氧化、微影、離子佈植和金屬鍍膜。 4.1 基本製程步驟包含氧化、微影、離子佈植和金屬鍍膜。Figure (a) A bare n-type Si wafer. (b) An oxidized Si wafer by dry or wet oxidation. (c) Application of resist. (d) Resist exposure through the mask.
4 Figure 4. 2 (a) The wafer after the development Figure (a) The wafer after the development. (b) The wafer after SiO2 removal. (c) The final result after a complete lithography process. (d) A p-n junction is formed in the diffusion or implantation process. (e) The wafer after metalization. (f) A p-n junction after the compete process.
76 Figure 4-32. (a) Energy band diagram of two isolated semiconductors Figure (a) Energy band diagram of two isolated semiconductors. b) Energy band diagram of an ideal n-p heterojunction at thermal equilibrium.