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光電半導體 沈志雄 博士 研究方向: 微光機電元件 聯絡:
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課程規劃 Textbook: Semiconductor Devices Physics and Technology, 作者:S.M Sze,書局: John Wiley&Sons,(歐亞書局代理) Reference Books: 1. Amnon Yariv, Optical Electronics 2. J. Wilson, J. F. B. Hawkes, Optoelectronics: An introduction 3. S. M. Sze, Physics of Semiconductor Devices, John Wiely and Sons, 2nd ed., 1987.
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課程規劃 II 第一至四週 固態物理基本理論 量子物理 晶格結構 鍍膜與長晶 SZE Chapter 1能帶與載子濃度
第一至四週 固態物理基本理論 量子物理 晶格結構 鍍膜與長晶 SZE Chapter 1能帶與載子濃度 Chapter2 載子傳輸現象 第五~七週 Chapter 3 P-N junction 第八~十週 Chapter7 基本光電元件 第九週 期中考試 第十一~十二週 Yariv Chapter5 Interaction of Radiation and Atomic Systems 第十三~十四週 Chapter 6 Theory of Laser Oscillation 第十五~十六週 專題 Silicon 元件 III-V 元件
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Bohr
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Pauli
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Quantum theory
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Scrödinger equation
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Spherical representation
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Bravais Lattice 1848, Auguste Bravais demonstrated that there are fourteen possible point lattices and no more
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Diamond/Zinc blend structures
Diamond structure: Si Zinc-blend: GaAs
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長晶,鍍膜製程 長晶: Epitaxy Czochralski Growth Liquid Phase Deposition MOCVD
MBE 鍍膜 Deposition CVD: APCVD PECVD LPCVD VPD: Evaporation: Heater E-GUN Sputtering Thermal Oxidation:
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Example of IC
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Thermal Oxidation I.
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Thermal Oxidation II.
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Czochralski Growth
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Vapor Phase Deposition
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Liquid Phase Deposition
Rotating Sliding The LPE-technology of ESY-8 is based on a quartz-boat sliding-technique. The boat consists of 4 stacks, each containing a substrate-plate with 18 hollows for the substrates and melts, a movable slit-plate to cover the melt during layer-growth, and a crucible for the melt and poly-GaP
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Applications of LPE
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MBE Equipment Electron gun eveporators (Si and Ge)
Knudsen cells (Ge, Sb, Co, Al) RHEED Crystal thickness monitor 5-axis goniometer
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Thermal Coater
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PECVD
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LPCVD
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Damage
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How to determine the structure
Crystal structures are determined experimentally by X-Ray Diffraction
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晶格/表面檢測 X-ray SIMS Auger/AES RBS SEM EDS EBIC
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Surface Analyzer
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X-ray/ Bragg Diffraction
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SIMS
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AES
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RBS
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Reference II.
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