光電半導體 沈志雄 博士 研究方向: 微光機電元件 聯絡: 0922217650 hilbert.shen@seed.net.tw
課程規劃 Textbook: Semiconductor Devices Physics and Technology, 作者:S.M Sze,書局: John Wiley&Sons,(歐亞書局代理) Reference Books: 1. Amnon Yariv, Optical Electronics 2. J. Wilson, J. F. B. Hawkes, Optoelectronics: An introduction 3. S. M. Sze, Physics of Semiconductor Devices, John Wiely and Sons, 2nd ed., 1987.
課程規劃 II 第一至四週 固態物理基本理論 量子物理 晶格結構 鍍膜與長晶 SZE Chapter 1能帶與載子濃度 第一至四週 固態物理基本理論 量子物理 晶格結構 鍍膜與長晶 SZE Chapter 1能帶與載子濃度 Chapter2 載子傳輸現象 第五~七週 Chapter 3 P-N junction 第八~十週 Chapter7 基本光電元件 第九週 期中考試 第十一~十二週 Yariv Chapter5 Interaction of Radiation and Atomic Systems 第十三~十四週 Chapter 6 Theory of Laser Oscillation 第十五~十六週 專題 Silicon 元件 III-V 元件
Bohr
Pauli
Quantum theory
Scrödinger equation
Spherical representation
Bravais Lattice 1848, Auguste Bravais demonstrated that there are fourteen possible point lattices and no more
Diamond/Zinc blend structures Diamond structure: Si Zinc-blend: GaAs
長晶,鍍膜製程 長晶: Epitaxy Czochralski Growth Liquid Phase Deposition MOCVD MBE 鍍膜 Deposition CVD: APCVD PECVD LPCVD VPD: Evaporation: Heater E-GUN Sputtering Thermal Oxidation:
Example of IC
Thermal Oxidation I.
Thermal Oxidation II.
Czochralski Growth
Vapor Phase Deposition
Liquid Phase Deposition Rotating Sliding The LPE-technology of ESY-8 is based on a quartz-boat sliding-technique. The boat consists of 4 stacks, each containing a substrate-plate with 18 hollows for the substrates and melts, a movable slit-plate to cover the melt during layer-growth, and a crucible for the melt and poly-GaP
Applications of LPE
MBE Equipment Electron gun eveporators (Si and Ge) Knudsen cells (Ge, Sb, Co, Al) RHEED Crystal thickness monitor 5-axis goniometer
Thermal Coater
PECVD
LPCVD
Damage
How to determine the structure Crystal structures are determined experimentally by X-Ray Diffraction
晶格/表面檢測 X-ray SIMS Auger/AES RBS SEM EDS EBIC
Surface Analyzer
X-ray/ Bragg Diffraction
SIMS
AES
RBS
Reference II.